The Strategy of Advanced Analysis in Semiconductor Nano-Device: From Nanoprobing to Nanoscopy and Nanoanalysis

As semiconductor devices shrink down to 20nm and below, the required imaging and analysis become more critical and challenging. To support the analytical purposes, the Nanoprobing (Figure 1) from SEM/AFM system provides the capability of direct measurement for Nano-device. We postulate the uniqueness [1] for the link in between electrical Nanoprobing and physical Nanoscopy & Nanoanalysis. Regarding the Nanoscopy and Nanoanalysis, we need capabilities for the dopant profiling and inspection for new materials, HKMG, and new structure, 3D FinFET. There are already plenty of references for the progress [2, 3]. In this paper, I would emphasize on the power of Atom Probing Tomography (APT), Analytical TEM (EELS and XEDS) and Atomic resolution STEM for the further physical analysis of post-Nanoprobing. Figure 2 illustrates the capable solutions of Nanoscopy and Nanoanalysis to reveal doping profile and gate materials in the MOS device. Therefore, the progress of Nanoscopy and Nanoanalysis becomes valuable for the advanced Semiconductor analysis.